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| Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 0.090 @ VGS = -4.5 V -3.7 rDS(on) (W) 0.053 @ VGS = -10 V ID (A) -4.9 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -1.7 2.0 1.3 -55 to 150 -3.9 -30 -0.9 1.1 W 0.7 _C -2.9 A Symbol VDS VGS 10 secs Steady State -30 "20 Unit V -4.9 -3.7 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 " x 1" FR4 Board. Document Number: 71091 S-015393--Rev. B, 17-Jul-00 This Material Copyrighted By Its Respective Manufacturer Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical 52 90 32 Maximum 62.5 110 40 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si4953ADY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -4.9 A VGS = -4.5 V, ID = -3.7 A VDS = -10 V, ID = -4.9 A IS = -1.7 A, VGS = 0 V -30 0.045 0.075 9 -0.8 -1.2 0.053 0.090 -1 "100 -1 -25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -15 V VGS = -10 V ID = -4.9 A 15 V, 10 V, 49 15 4 2 7 10 40 20 30 15 20 80 40 60 ns 25 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 7 V 24 5V I D - Drain Current (A) 18 I D - Drain Current (A) 18 125_C 12 6V 24 30 TC = -55_C 25_C Transfer Characteristics 12 4V 6 3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 This Material Copyrighted By Its Respective Manufacturer Document Number: 71091 S-015393--Rev. B, 17-Jul-00 Si4953ADY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 1500 Vishay Siliconix Capacitance 0.15 C - Capacitance (pF) 1200 Ciss 900 0.10 VGS = 4.5 V 600 Coss VGS = 10 V 0.05 300 Crss 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.9 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.9 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 8 12 16 20 1.2 4 1.0 2 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.40 0.35 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.30 0.25 0.20 0.15 0.10 0.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.9 A TJ = 25_C 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71091 S-015393--Rev. B, 17-Jul-00 This Material Copyrighted By Its Respective Manufacturer www.vishay.com S FaxBack 408-970-5600 2-3 Si4953ADY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 50 Single Pulse Power 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 40 30 0.2 20 0.0 10 -0.2 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 This Material Copyrighted By Its Respective Manufacturer Document Number: 71091 S-015393--Rev. B, 17-Jul-00 |
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